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GaN is a semiconductor material of third generation with a large forbidden-band width. It has superior properties compared to first-generation Si or second-generation GaAs.
GaN devices, due to the large band gaps and high thermal conductivity of GaN, can operate above 200 degC temperatures, allowing them to carry higher energy densities and greater reliability. A larger forbidden band and dielectric break-down electric field can reduce the on resistance of the GaN device. This is good for improving the overall energy efficiency.

GaN semiconductors can therefore be designed to have a higher bandwidth, a higher amplifier gain and efficiencies, as well as smaller dimensions, all in keeping with the "tonality", or consistency, of the semiconductor industry.

The GaN base station amplifier is perfect for 5G. Gallium nitride, gallium arsenide and indium-phosphide are common semiconductor materials used in radio frequency applications.

GaN devices are more powerful than processes with high frequency, such as indium phosphide and gallium arsenide. GaN also has better frequency characteristics compared to processes that produce power such as LDCMOS or silicon carbide. GaN devices must have a higher instantaneous bandwith. This can be achieved by using carrier aggregation, preparing higher frequency carriers and using carrier aggregation.

Gallium nitride can achieve higher power density than silicon or any other device. GaN has a higher power density. GaN's small size is an advantage when it comes to a power level. Smaller devices can reduce device capacitance, which makes the design of systems with higher bandwidth easier. Power Amplifiers (PA) are a critical component of RF circuits.

Currently, power amplifiers are primarily comprised of a gallium-arsenide power amplifier and a complementary metallic oxide semiconductor power amplifier (CMOS PA). The GaAs PA dominates the market, but as 5G approaches, GaAs devices may not be able maintain high integration with such high frequencies.

GaN will be the next hot topic. GaN, as a wide-bandgap semiconductor, can withstand greater operating voltages. This results in higher power density. It also means a higher operating temperature.

Qualcomm President Cristiano Amon said at the Qualcomm 5G/4G Summit that the first 5G smartphones will debut during the first half and end of the holiday season. 5G is said to be 100 to 1000 times faster than the current 4G network, and will reach Gigabit per seconds.

As well as the increase in the density and number of bases stations, there will be a large increase in RF devices. As a result, in comparison with the 3G/4G eras, 5G devices will have a dozens or even hundreds of times greater density. Therefore, cost control and silicon-based GaN technology has a large cost advantage. It is possible to achieve the best cost-effective advantage with silicon-based GaN.

As we can see by looking at the development of the previous two generations, commercialization is the biggest challenge that any new semiconductor technology faces. GaN, which is also in this stage at the moment, will cost more to civilians because of the increased demand for silicon-based devices, the mass production and process innovations, etc.

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